[16p-K301-1~13] 13.7 Compound and power devices, process technology and characterization

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[16p-K301-1] [The 46th Young Scientist Award Speech] Real-time Visualization of 3D Temperature Distribution in SiC Wafers During Ultra-Rapid Thermal Annealing Using Optical-Interference Contactless Thermometry

〇Jiawen Yu¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:

SiC,ultra-rapid thermal annealing,plasma processing

Real-time temperature measurement during ultra-rapid thermal processing is essential for improving temperature control accuracy and ensuring process uniformity and reproducibility. However, measuring temperature during plasma processes and ultra-rapid thermal annealing (URTA) poses significant challenges. In this study, a real-time temperature measurement technique based on Optical-Interference Contactless Thermometry (OICT) was developed for URTA. Utilizing this technique, the transient three-dimensional temperature distribution of SiC wafers during millisecond annealing induced by an atmospheric-pressure thermal plasma jet (TPJ) was successfully visualized in real time.