[16p-K301-1~13] 13.7 Compound and power devices, process technology and characterization | The 72nd JSAP Spring Meeting 2025

Advanced Search

Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[16p-K301-1~13]13.7 Compound and power devices, process technology and characterization

Sun. Mar 16, 2025 2:00 PM - 5:30 PM JST
Sun. Mar 16, 2025 5:00 AM - 8:30 AM UTC

K301 (Lecture Hall Bldg.)

Takuji Hosoi(Kwansei Gakuin Univ.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[16p-K301-1][The 46th Young Scientist Award Speech] Real-time Visualization of 3D Temperature Distribution in SiC Wafers During Ultra-Rapid Thermal Annealing Using Optical-Interference Contactless Thermometry

〇Jiawen Yu¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Comment()

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-K301-2]Effect of High Temperature Annealing for Silicon-Cap-Annealed Contact on n-type 4H-SiC

〇Takahito Fukuzawa¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Comment()

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[16p-K301-3]Comparison of electronic stopping powers of 4H-SiC and 2H-GaN for low-velocity <0001> channeled ions with atomic numbers of 12 to 15

〇Kazuhiro Mochizuki¹, Tomoaki Nishimura¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

Comment()

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[16p-K301-4]Channeling ion implantation along with the <0001> direction in 4H-SiC: Are the Si- and C-faces the same?

〇Masashi Kato¹ (1.NITech)

Comment()

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[16p-K301-5]Polytype ratio analysis of 3C-SiC/4H-SiC stacked epilayer on trenched 4H-SiC substrates by Raman spectroscopy

〇Takuhiro Hasegawa¹, Hiroyuki Nagasawa², Masashi Kato¹ (1.Nagoya Inst. of Tech, 2.CUSIC Inc.)

Comment()

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K301-6]LOPC Raman spectra shift in SiC pn diode under forward bias condition

〇Kuniharu Kobashi¹, Takuya Hoshii^1,3, Anton Myalitsin², Takashi Yoda³, Takayuki Ooba³, Kuniyuki Kakushima^1,3 (1.Science Tokyo Inst., 2.ANVOS Analytics, Inc, 3.Science Tokyo WOW alliance)

Comment()

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[16p-K301-7]Sample thickness dependence of omnidirectional photoluminescence spectra for 4H-SiC epilayers

〇Hayaki Makino¹, Kengo Suzuki², Masashi Kato¹ (1.NITech, 2.Hamamatsu Photonics K.K.)

Comment()

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[16p-K301-8]Microscopic mechanism of expansion of basal plane dislocation (BPD) in 4H-SiC by first-principles calculations

〇(M2)Masaki Sano¹, Jun Kojima², Shoichi Onda², Takashi Yoda³, Takayuki Ohba³, Atsushi Oshiyama², Kenji Shiraishi^1,2 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.WOW Alliance, Inst. Sci. Tokyo)

Comment()

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-K301-9]Suppression of stacking faults expansion by backside proton implantation into SiC substrates

〇Tong Li¹, Hitoshi Sakane², Shunta Harada³, Masashi Kato¹ (1.NITech., 2.SHI-ATEX, 3.Nagoya Univ.)

Comment()

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[16p-K301-10]Suppression of bipolar degradation using low-BPD wafers

〇(P)Endong Zhang¹, Haruko Inayoshi², Tomohiko Sugiyama², Kiyoshi Matsushima², Jun Yoshikawa², Masashi Kato¹ (1.NITech, 2.NGK INSULATORS, LTD.)

Comment()

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K301-11]Si-polar 3C-SiC/diamond junctions for crystal growth of nitride

〇(B)Hikaru Iwamoto¹, Yoshiki Sakaida², Hiroki Uratani², Naoteru Shigekawa³, Jianbo Liang³ (1.Osaka City Univ., 2.Air Water Inc., 3.Osaka Metropolitan Univ.)

Comment()

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[16p-K301-12]4050 h Continuous Operation of Diamond MOS Field Effect Transistors

Niloy Chandra Saha¹, Tomoki Shiratsuchi¹, Toshiyuki Oishi¹, Masanori Eguchi², 〇Makoto Kasu¹ (1.Dept. Electrical Electronic Eng., Saga Univ., 2.Synchrotron, Saga Univ.)

Comment()

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)English Presentation

[16p-K301-13]High Power Cut-off Frequency (f_MAX) 74 GHz Diamond MOSFETs with Lg= 157 nm.

〇Niloy Chandra Saha¹, Masanori Eguchi², Yoshiki Muta¹, Toshiyuki Oishi¹, Makoto Kasu¹ (1.Dept. Electrical Electronic Eng., Saga Univ., 2.Synchrotron Research Center, Saga Univ.)

Comment()

Back to Category List

Session Details

[16p-K301-1~13]13.7 Compound and power devices, process technology and characterization

[16p-K301-1][The 46th Young Scientist Award Speech] Real-time Visualization of 3D Temperature Distribution in SiC Wafers During Ultra-Rapid Thermal Annealing Using Optical-Interference Contactless Thermometry

[16p-K301-2]Effect of High Temperature Annealing for Silicon-Cap-Annealed Contact on n-type 4H-SiC

[16p-K301-3]Comparison of electronic stopping powers of 4H-SiC and 2H-GaN for low-velocity <0001> channeled ions with atomic numbers of 12 to 15

[16p-K301-4]Channeling ion implantation along with the <0001> direction in 4H-SiC: Are the Si- and C-faces the same?

[16p-K301-5]Polytype ratio analysis of 3C-SiC/4H-SiC stacked epilayer on trenched 4H-SiC substrates by Raman spectroscopy

[16p-K301-6]LOPC Raman spectra shift in SiC pn diode under forward bias condition

[16p-K301-7]Sample thickness dependence of omnidirectional photoluminescence spectra for 4H-SiC epilayers

[16p-K301-8]Microscopic mechanism of expansion of basal plane dislocation (BPD) in 4H-SiC by first-principles calculations

[16p-K301-9]Suppression of stacking faults expansion by backside proton implantation into SiC substrates

[16p-K301-10]Suppression of bipolar degradation using low-BPD wafers

[16p-K301-11]Si-polar 3C-SiC/diamond junctions for crystal growth of nitride

[16p-K301-12]4050 h Continuous Operation of Diamond MOS Field Effect Transistors

[16p-K301-13]High Power Cut-off Frequency (fMAX) 74 GHz Diamond MOSFETs with Lg= 157 nm.

[16p-K301-13]High Power Cut-off Frequency (f_MAX) 74 GHz Diamond MOSFETs with Lg= 157 nm.