[16p-K301-1~13] 13.7 Compound and power devices, process technology and characterization

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K301-11] Si-polar 3C-SiC/diamond junctions for crystal growth of nitride

〇(B)Hikaru Iwamoto¹, Yoshiki Sakaida², Hiroki Uratani², Naoteru Shigekawa³, Jianbo Liang³ (1.Osaka City Univ., 2.Air Water Inc., 3.Osaka Metropolitan Univ.)

Keywords:

nitride semiconductor,Diamond,surface-activated bonding

We previously demonstrated the excellent heat dissipation properties of a nitride semiconductor/3C-SiC buffer//Diamond structure fabricated using the surface-activated bonding method. In this study, we fabricated a 3C-SiC buffer//Diamond structure for targetting crystal growth after bonding, which is assumed to play an important role in expanding the structural flexibility of nitride layer.