Presentation Information
[16p-K301-11]Si-polar 3C-SiC/diamond junctions for crystal growth of nitride
〇(B)Hikaru Iwamoto1, Yoshiki Sakaida2, Hiroki Uratani2, Naoteru Shigekawa3, Jianbo Liang3 (1.Osaka City Univ., 2.Air Water Inc., 3.Osaka Metropolitan Univ.)
Keywords:
nitride semiconductor,Diamond,surface-activated bonding
We previously demonstrated the excellent heat dissipation properties of a nitride semiconductor/3C-SiC buffer//Diamond structure fabricated using the surface-activated bonding method. In this study, we fabricated a 3C-SiC buffer//Diamond structure for targetting crystal growth after bonding, which is assumed to play an important role in expanding the structural flexibility of nitride layer.
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