[16p-K301-1~13] 13.7 Compound and power devices, process technology and characterization

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[16p-K301-12] 4050 h Continuous Operation of Diamond MOS Field Effect Transistors

Niloy Chandra Saha¹, Tomoki Shiratsuchi¹, Toshiyuki Oishi¹, Masanori Eguchi², 〇Makoto Kasu¹ (1.Dept. Electrical Electronic Eng., Saga Univ., 2.Synchrotron, Saga Univ.)

Keywords:

diamond,power device

We successfully fabricated diamond MOSFETs, which exhibited 4050 h continuous operation.