[16p-K301-1~13] 13.7 Compound and power devices, process technology and characterization

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)English Presentation

[16p-K301-13] High Power Cut-off Frequency (f_MAX) 74 GHz Diamond MOSFETs with Lg= 157 nm.

〇Niloy Chandra Saha¹, Masanori Eguchi², Yoshiki Muta¹, Toshiyuki Oishi¹, Makoto Kasu¹ (1.Dept. Electrical Electronic Eng., Saga Univ., 2.Synchrotron Research Center, Saga Univ.)

Keywords:

Diamond,RF Device