[16p-K301-1~13] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[16p-K301-3] Comparison of electronic stopping powers of 4H-SiC and 2H-GaN for low-velocity <0001> channeled ions with atomic numbers of 12 to 15

〇Kazuhiro Mochizuki¹, Tomoaki Nishimura¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

Keywords:

gallium nitride,silicon carbide,channeling