[16p-K301-1~13] 13.7 Compound and power devices, process technology and characterization

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[16p-K301-4] Channeling ion implantation along with the <0001> direction in 4H-SiC: Are the Si- and C-faces the same?

〇Masashi Kato¹ (1.NITech)

Keywords:

SiC,ion implantation,channeling

In recent years, channeling ion implantation has attracted attention as a method for doping deep inside 4H-SiC. Although there are multiple crystal axis directions along which ions can be channeled in 4H-SiC, ion implantation in the <0001> direction is the easiest to implement. In this study, Al ions were implanted into the Si and C faces of 4H-SiC, and the difference in Al distribution was observed.