[16p-K301-1~13] 13.7 Compound and power devices, process technology and characterization

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[16p-K301-5] Polytype ratio analysis of 3C-SiC/4H-SiC stacked epilayer on trenched 4H-SiC substrates by Raman spectroscopy

〇Takuhiro Hasegawa¹, Hiroyuki Nagasawa², Masashi Kato¹ (1.Nagoya Inst. of Tech, 2.CUSIC Inc.)

Keywords:

Simultaneous Lateral Epitaxy,Raman spectroscopy