[16p-K301-1~13] 13.7 Compound and power devices, process technology and characterization

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K301-6] LOPC Raman spectra shift in SiC pn diode under forward bias condition

〇Kuniharu Kobashi¹, Takuya Hoshii^1,3, Anton Myalitsin², Takashi Yoda³, Takayuki Ooba³, Kuniyuki Kakushima^1,3 (1.Science Tokyo Inst., 2.ANVOS Analytics, Inc, 3.Science Tokyo WOW alliance)

Keywords:

semiconductor,SiC power device,LO phonon-plasmon coupling mode

Using a 4H-SiCp+n junction diode under forward bias, LO phonon-plasmon coupling mode (LOPC) spectra were measured using microscopic Raman spectroscopy with confocal optics. It was confirmed that the LOPC spectrum of the epitaxial layer changes to a gradual shape in response to the amount of forward bias energizing current, which corresponds to the change in electron concentration due to hole injection.