[16p-K301-1~13] 13.7 Compound and power devices, process technology and characterization

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-K301-9] Suppression of stacking faults expansion by backside proton implantation into SiC substrates

〇Tong Li¹, Hitoshi Sakane², Shunta Harada³, Masashi Kato¹ (1.NITech., 2.SHI-ATEX, 3.Nagoya Univ.)

Keywords:

SiC,proton implantation,stacking faults