[16p-K310-1~5] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[16p-K310-1] [The 57th Young Scientist Presentation Award Speech] Selective-area MOVPE growth of InP micro templates and InP/InGaAsP double heterostructures on SOI (001) substrates for III-V/Si integration

〇Hiroya Honma¹, Hiroki Sugiyama¹, Tatsurou Hiraki¹, Takuro Fujii¹, Tomonari Sato¹, Shinji Matsuo¹ (1.NTT)

Keywords:

direct growth of III-V semiconductors on Si,selective growth,MOVPE/MOCVD

We have been developing a technology to achieve monolithic integration of III-V semiconductor optical devices such as membrane lasers by combining lateral growth technique of InP templates on SOI (001) substrates and selective regrowth technique on the templates. In this talk, we will briefly review our previous studies on planar defect suppression in InP templates and report on InP/InGaAsP double heterostructure integration by selectively regrowing on the high-quality InP templates.