[16p-K310-1~5] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy | The 72nd JSAP Spring Meeting 2025

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Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16p-K310-1~5]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Sun. Mar 16, 2025 1:30 PM - 2:45 PM JST
Sun. Mar 16, 2025 4:30 AM - 5:45 AM UTC

K310 (Lecture Hall Bldg.)

Jiro Nishinaga(AIST)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[16p-K310-1][The 57th Young Scientist Presentation Award Speech] Selective-area MOVPE growth of InP micro templates and InP/InGaAsP double heterostructures on SOI (001) substrates for III-V/Si integration

〇Hiroya Honma¹, Hiroki Sugiyama¹, Tatsurou Hiraki¹, Takuro Fujii¹, Tomonari Sato¹, Shinji Matsuo¹ (1.NTT)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[16p-K310-2]Operating mechanism of InAs/GaAs(111)A infrared detectors: Effects of surfaces of the GaAs substrates

〇Takaaki Mano¹, Nobuyuki Ishida¹, Takuya Kawazu¹, Akihiro Ohtake¹, Hideki T. Miyazaki¹ (1.NIMS)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[16p-K310-3]Molecular Beam Epitaxial Growth of AlGaAs on Sapphire (0001) and Its Characteristics at Different Film Thicknesses

〇(B)Sota Wajima^1,3, Hidetoshi Hashimoto^2,3, Daiki Sato⁴, Tomohiro Nishitani⁴, Fumitaro Ishikawa³ (1.Hokkaido Univ., 2.Hokkaido Univ. Info., 3.Hokkaido Univ.RCIQE, 4.Photo electron Soul Inc.)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-K310-4]A method for measuring substrate temperature during MBE growth of GaAsBi

〇Satoshi Shimomura¹, Riku Eguchi¹, Hiroto Imai¹ (1.Ehime Univ.)

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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[16p-K310-5]KPZ-BKT Universal Class for Kinetic Roughening on (001) Surface and its Temperature and Driving Force Dependence

〇Noriko Akutsu¹, Yoshihiro Kangwa¹ (1.RIAM, Kyushu Univ.)

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