[16p-K310-1~5] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[16p-K310-2] Operating mechanism of InAs/GaAs(111)A infrared detectors: Effects of surfaces of the GaAs substrates

〇Takaaki Mano¹, Nobuyuki Ishida¹, Takuya Kawazu¹, Akihiro Ohtake¹, Hideki T. Miyazaki¹ (1.NIMS)

Keywords:

InAs,GaAs,Surface impurities

We investigated the operating mechanism of metamorphic n-InAs on n-GaAs (111)A infrared photodetectors. Due to the strong Fermi-level pinning effect caused by the residual impurities (SI, C, and O) on original GaAs substrates, rectangle-shaped GaAs barrier is formed instead of triangular-shaped one. We attribute the low-dark current and high sensitivity of our devices to this barrier.