[16p-K310-1~5] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[16p-K310-3] Molecular Beam Epitaxial Growth of AlGaAs on Sapphire (0001) and Its Characteristics at Different Film Thicknesses

〇(B)Sota Wajima^1,3, Hidetoshi Hashimoto^2,3, Daiki Sato⁴, Tomohiro Nishitani⁴, Fumitaro Ishikawa³ (1.Hokkaido Univ., 2.Hokkaido Univ. Info., 3.Hokkaido Univ.RCIQE, 4.Photo electron Soul Inc.)

Keywords:

Molecular Beam Epitaxy,Sapphire