[16p-K310-1~5] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-K310-4] A method for measuring substrate temperature during MBE growth of GaAsBi

〇Satoshi Shimomura¹, Riku Eguchi¹, Hiroto Imai¹ (1.Ehime Univ.)

Keywords:

MBE,GaAsBi,thermography

A method for measuring substrate temperature using thermography for the growth of GaAsBi is proposed.