[16p-K401-1~16] 15.4 III-V-group nitride crystals

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-K401-10] Photoluminescence spectra of p-GaN epilayers grown by halide vapor phase epitaxy (II)

〇Shigefusa Chichibu¹, Kazuki Ohnishi², Hirotaka Watanabe², Shugo Nitta², Yoshio Honda^2,3, Hiroshi Amano^2,3, Akira Uedono⁴, Shoji Ishibashi⁵, Johei Shima¹ (1.Tohoku Univ., 2.INass, Nagoya Univ., 3.Nagoya Univ., 4.Univ. of Tsukuba, 5.AIST)

Keywords:

Nitride semiconductor,HVPE,Photoluminescence

Photoluminescence spectra of Mg-doped GaN grown by HVPE will be compared with those of MOVPE epilayers.