The 72nd JSAP Spring Meeting 2025
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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[16p-K401-1~16]15.4 III-V-group nitride crystals

Sun. Mar 16, 2025 1:00 PM - 5:30 PM JST
Sun. Mar 16, 2025 4:00 AM - 8:30 AM UTC
K401 (Lecture Hall Bldg.)
Ryota Ishii(Kyoto Univ.), Daichi Imai(Meijo Univ.), Kazuki Ohnishi(Mie University)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[16p-K401-1]Effect of nonradiative recombination process on 2-dimensional exciton in AlN/GaN/AlN ultrathin quantum well analyzed by phononic–excitonic–radiative model

〇(D)Masaya Chizaki1, Yoshihiro Ishitani1 (1.Chiba Univ.)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)English Presentation

[16p-K401-2]Integrated analysis of the ratio of A1(LO) and E2(high) modes energy shift in Fe-doped GaN with Raman spectroscopy

〇(D)KhaingShwe TheeEi1, Kohei Ueno2, Bei Ma1, Hiroshi Fujioka2, Yoshihiro Ishitani1 (1.Chiba Univ., 2.The Univ. of Tokyo)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[16p-K401-3]Analysis of the in-gap energy states in heavily Si-doped GaN

〇Raiya Hirose1, Motoki Kondo2, Kazuki Osada2, Hinata Uda2, Daichi Imai1,2, Tetuya Takeuchi1,2, Takao Miyazima1,2 (1.Meijo Univ., 2.Grad. Sch. Sci. Tech., Meijo Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[16p-K401-4]Proposal of rear-side excitation configuration to improve the accuracies of thermal characterization of GaN using photothermal deflection spectroscopy

〇Gouki Sawada1, Kakeru Tanaka2, Nozomi Yamasako2, Mayu Nomura2, Daichi Imai1,2, Takao Miyajima1,2 (1.Meijo Univ., 2.Grad. Sch. Sci. Tech., Meijo Univ.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-5]Understanding of transient phenomena in photoluminescence for freestanding direct-transition-semiconductor crystals

〇(B)Daichi Tanaka1, Shuhei Ichikawa2,3, Koshi Sano2, Hiroshi Tabata2, Kazunobu Kojima2 (1.Osaka Univ., 2.Grad. Sch. Eng., Osaka Univ., 3.Research Center for UHVEM, Osaka Univ.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-6]Local luminescence characterization of gallium nitride semiconductors by wavelength angle-resolved cathodoluminescence method

〇Shota Usami1, Zentaro Akase1, Kazunori Iwamitsu1, Toshiya Yokogawa1, Hajime Fujikura2, Shigetaka Tomiya1 (1.NAIST, 2.Sumitomo Chemical Co., Ltd.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[16p-K401-7]Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN epitaxial layers studied by photoluminescence measurements

〇Kohei Shima1, Shoji Ishibashi2, Akira Uedono3, Michal Bockowski4,5, Jun Suda5,6, Tetsu Kachi5, Shigefusa Chichibu1 (1.IMRAM-Tohoku Univ., 2.AIST, 3.Univ. of Tsukuba, 4.IHPP PAS, 5.IMaSS-Nagoya Univ., 6.Nagoya Univ.)
Comment()
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[16p-K401-8]Deep-UV luminescence characteristics of BN thin films grown on a sapphire substrate by metalorganic vapor phase epitaxy

〇Kohei Shima1, Haruto Tsujitani1, Shigefusa Chichibu1 (1.IMRAM-Tohoku Univ.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[16p-K401-9]Luminescent properties of Si-doped homoepitaxial AlN grown by HVPE

〇Shigefusa Chichibu1, Kiyoshi Kikuchi1, Baxter Moody2, Seiji Mita2, Ramon Collazo3, Zlatko Sitar2,3, Yoshinao Kumagai4, Shoji Ishibashi5, Akira Uedono6, Kohei Shima1 (1.Tohoku Univ., 2.Adroit Materials, Inc., 3.North Carolina State University, 4.Tokyo Univ. Agri. & Tech., 5.AIST, 6.Univ. of Tsukuba)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-K401-10]Photoluminescence spectra of p-GaN epilayers grown by halide vapor phase epitaxy (II)

〇Shigefusa Chichibu1, Kazuki Ohnishi2, Hirotaka Watanabe2, Shugo Nitta2, Yoshio Honda2,3, Hiroshi Amano2,3, Akira Uedono4, Shoji Ishibashi5, Johei Shima1 (1.Tohoku Univ., 2.INass, Nagoya Univ., 3.Nagoya Univ., 4.Univ. of Tsukuba, 5.AIST)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-11]Dependence of Thermal Conductivity on Oxygen Concentration in OVPE-GaN Substrates

〇(M1)Kosei Asao1, Shigeyoshi Usami1, Masayuki Imanishi1, Mihoko Maruyama1, Masashi Yoshimura2, Masahiko Hata3, Masashi Isemura4, Yusuke Mori1 (1.Grad. Sch. of Eng., Osaka Univ., 2.ILE, Osaka Univ., 3.Itochu Plastics Inc., 4.Sosho-Ohshin Inc.)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-12]Investigation of ultra-high-speed growth conditions of GaN in high Ga2O region by OVPE

〇Daisuke Yamada1, Usami Shigeyosi1, Higasiyama Rituko1, Imanisi Masayuki1, Maruyama Mihoko1, Takino junichi2, Sumi Tomoaki2, Okayama Yoshio2, Yoshimura Masashi3, Hata Masahiko4, Isemura Msahiko5, Mori Yusuke1 (1.Grad.Sch. of Eng., Osaka Univ, 2.Panasonic Holdings Corporation, 3.ILE, Osaka Univ, 4.Itocyu Plastics Inc, 5.Sosho-Ohshin Inc)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-13]Relationship between the amount of polycrystal in the reactor and large pits in GaN growth by OVPE method

〇(M1)Naoki Fujimoto1, Shigeyosi Usami1, Masayuki Imanishi1, Mihoko Maruyama1, Masashi Yoshimura2, Masahiko Hata3, Isemura Masashi4, Yusuke Mori1 (1.Grad. Sch. of Eng., Osaka Univ, 2.ILE, Osaka Univ, 3.Itochu Plastics Inc, 4.Sosho-Ohshin Inc)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-14]Investigation of GaN diameter maintenance area by OVPE method

〇Jumpei Terashima1, Shigeyoshi Usami2, Tubasa Nakazono2, Masayuki Imanishi2, Mihoko Maruyama2, Masashi Yoshimura3, Masahiko Hata4, Masashi Isemura5, Yusuke Mori2 (1.Sch. of Eng., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.ILE, Osaka Univ., 4.Itochu Plastics Inc, 5.Sosho-Ohshin Inc)
Comment()
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-15]The Effect of Ga Composition Ratio of Ga-Na melt on the Dislocation Density at the Coalescence Region of GaN Crystal Grown with the Na-flux Point Seed Technique

〇(M1)Ryotaro Sasaki1, Shogo Washida1, Masayuki Imanishi1, Kosuke Murakami1, Shigeyoshi Usami1, Mihoko Maruyama1, Masashi Yoshimura1,2, Yusuke Mori1 (1.Grad. Sch. of Eng., Osaka Univ, 2.ILE, Osaka Univ.)
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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-16]Suppression of polycrystal by increasing the temperature and pressure of the GaN crystal growth atmosphere in the Na Flux method using Flux-Film-Coated technic

〇Tomoki Tashiro1, Masayuki Imanishi2, Shogo Washida2, Kosuke Murakami2, Shigeyoshi Usami2, Mihoko Maruyama2, Masashi Yoshimura2,3, Yusuke Mori2 (1.Sch. of Eng., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.ILE, Osaka Univ.)
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