[16p-K401-1~16] 15.4 III-V-group nitride crystals

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-11] Dependence of Thermal Conductivity on Oxygen Concentration in OVPE-GaN Substrates

〇(M1)Kosei Asao¹, Shigeyoshi Usami¹, Masayuki Imanishi¹, Mihoko Maruyama¹, Masashi Yoshimura², Masahiko Hata³, Masashi Isemura⁴, Yusuke Mori¹ (1.Grad. Sch. of Eng., Osaka Univ., 2.ILE, Osaka Univ., 3.Itochu Plastics Inc., 4.Sosho-Ohshin Inc.)

Keywords:

OVPE,Thermal conductivity,Gallium Nitride

This study investigates the effect of oxygen concentration on the thermal conductivity of GaN grown by the OVPE method. Oxygen concentrations were varied in the range of 10^19 to 10^21 cm^(-3), and the thermal diffusivity, specific heat, and density were measured to calculate the thermal conductivity. Experimental results were compared with theoretical values, revealing that lattice distortion and phonon scattering caused by oxygen impurities contribute to the reduction in thermal conductivity. Particularly, for GaN with higher oxygen concentrations, the impact of phonon scattering due to free carriers was found to be significant.