Presentation Information

[16p-K401-12]Investigation of ultra-high-speed growth conditions of GaN in high Ga2O region by OVPE

〇Daisuke Yamada1, Usami Shigeyosi1, Higasiyama Rituko1, Imanisi Masayuki1, Maruyama Mihoko1, Takino junichi2, Sumi Tomoaki2, Okayama Yoshio2, Yoshimura Masashi3, Hata Masahiko4, Isemura Msahiko5, Mori Yusuke1 (1.Grad.Sch. of Eng., Osaka Univ, 2.Panasonic Holdings Corporation, 3.ILE, Osaka Univ, 4.Itocyu Plastics Inc, 5.Sosho-Ohshin Inc)

Keywords:

OVPE,GaN,ultra-high-speed growth


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