[16p-K401-1~16] 15.4 III-V-group nitride crystals

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-14] Investigation of GaN diameter maintenance area by OVPE method

〇Jumpei Terashima¹, Shigeyoshi Usami², Tubasa Nakazono², Masayuki Imanishi², Mihoko Maruyama², Masashi Yoshimura³, Masahiko Hata⁴, Masashi Isemura⁵, Yusuke Mori² (1.Sch. of Eng., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.ILE, Osaka Univ., 4.Itochu Plastics Inc, 5.Sosho-Ohshin Inc)

Keywords:

OVPE,Gallium Nitride

To achieve GaN substrate growth while maintaining its diameter, we investigated the feasibility of vertical growth on the substrate sidewalls using the OVPE method. Growth experiments were conducted at a temperature of 1286°C by varying the flow rates of N2O and NH3, and mapping data was obtained for sidewall angles, growth rates, and polycrystalline coverage. It was observed that reducing the N2O flow rate transformed the sidewall shape from tapered to vertical. Furthermore, lowering both N2O and NH3 flow rates resulted in a decreasing trend in polycrystalline coverage. These findings indicate that vertical sidewall growth and polycrystalline suppression are achievable in regions with low N2O and low NH3 flow rates.