[16p-K401-1~16] 15.4 III-V-group nitride crystals

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-16] Suppression of polycrystal by increasing the temperature and pressure of the GaN crystal growth atmosphere in the Na Flux method using Flux-Film-Coated technic

〇Tomoki Tashiro¹, Masayuki Imanishi², Shogo Washida², Kosuke Murakami², Shigeyoshi Usami², Mihoko Maruyama², Masashi Yoshimura^2,3, Yusuke Mori² (1.Sch. of Eng., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.ILE, Osaka Univ.)

Keywords:

gallium nitride,Na flux,crystal growth

For the fabrication of high-quality GaN substrates for vertical power devices, large-diameter and low-dislocation substrates are required, and flux-film-coated (FFC) technic in the Na flux method is effective. However, polycrystal nucleation has been a problem. In this study, We Investigated polycrystal nucleation under higher temperature and pressure conditions (880°C, 5 MPa) compared to conventional methods in the Na Flux method using FFC technic. It was confirmed that increasing the carbon addition from the conventional 0.5 mol% to 1.0 mol% could suppress polycrystal nucleation while maintaining a high growth rate of GaN crystals.