[16p-K401-1~16] 15.4 III-V-group nitride crystals

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[16p-K401-3] Analysis of the in-gap energy states in heavily Si-doped GaN

〇Raiya Hirose¹, Motoki Kondo², Kazuki Osada², Hinata Uda², Daichi Imai^1,2, Tetuya Takeuchi^1,2, Takao Miyazima^1,2 (1.Meijo Univ., 2.Grad. Sch. Sci. Tech., Meijo Univ.)

Keywords:

tunnel junction,Photothermal deflection spectroscopy,GaN