[16p-K401-1~16] 15.4 III-V-group nitride crystals

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[16p-K401-4] Proposal of rear-side excitation configuration to improve the accuracies of thermal characterization of GaN using photothermal deflection spectroscopy

〇Gouki Sawada¹, Kakeru Tanaka², Nozomi Yamasako², Mayu Nomura², Daichi Imai^1,2, Takao Miyajima^1,2 (1.Meijo Univ., 2.Grad. Sch. Sci. Tech., Meijo Univ.)

Keywords:

gallium nitride,thermal diffusivity,photothermal deflection spectroscopy