[16p-K401-1~16] 15.4 III-V-group nitride crystals

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-K401-5] Understanding of transient phenomena in photoluminescence for freestanding direct-transition-semiconductor crystals

〇(B)Daichi Tanaka¹, Shuhei Ichikawa^2,3, Koshi Sano², Hiroshi Tabata², Kazunobu Kojima² (1.Osaka Univ., 2.Grad. Sch. Eng., Osaka Univ., 3.Research Center for UHVEM, Osaka Univ.)

Keywords:

photoluminescence,Monte Carlo Simulation,GaN

Carrier lifetime must be measured accurately, as it can be used to evaluate both the concentration of impurities in the crystal and the efficiency of the device. Time-resolved photoluminescence (TRPL) is a widely used technique for measuring carrier lifetime. However, this technique does not take into account the effects of self-absorption (SA) and photon recycling (PR). We simulated PL transients considering these effects and confirmed that SA and PR significantly alter the carrier lifetime estimated from TRPL measurements.