[16p-K401-1~16] 15.4 III-V-group nitride crystals

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[16p-K401-9] Luminescent properties of Si-doped homoepitaxial AlN grown by HVPE

〇Shigefusa Chichibu¹, Kiyoshi Kikuchi¹, Baxter Moody², Seiji Mita², Ramon Collazo³, Zlatko Sitar^2,3, Yoshinao Kumagai⁴, Shoji Ishibashi⁵, Akira Uedono⁶, Kohei Shima¹ (1.Tohoku Univ., 2.Adroit Materials, Inc., 3.North Carolina State University, 4.Tokyo Univ. Agri. & Tech., 5.AIST, 6.Univ. of Tsukuba)

Keywords:

Nitride semiconductor,AlN,Cathodoluminescence

Optical properties of Si-doped AlN grown by halide vapor phase epitaxy will be shown to underline the importance of vacancy-type defects forming midgap recombination centers.