[16p-P03-1~2] 8.3 Plasma nanotechnology

[16p-P03-1] Preparation of ultra-hydrophobic SiO:CH particule-deposited films by PECVD method

〇Mayuki Nisio¹, Yasushi Inoue¹, Osamu Takai² (1.Chiba Inst. Technol., 2.Kanto Gakuin Univ.)

Keywords:

plasma CVD,Silica with organic groups,plasma polymerization

Plasma polymerization is a well-known process to form SiO:CH films with a microcavity structure on the surface of SiO:CH. One of the challenges for practical application of SiO:CH films is that the bonding between the particles is weak and the films are destroyed by minute stress. The objective of this study is to investigate the effect of RF power on the film quality, with the ultimate goal of improving the mechanical properties of SiO:CH deposited films that achieve ultra-hydrophobic properties with a water droplet contact angle of 150° or higher. The films showed stable high water repellency at all RF power levels. At RF powers above 100 W, the particle size decreased with increasing RF power. This is thought to be due to an increase in the number of particles per unit volume because the increase in power input increased the plasma density and radical density, which in turn increased the nucleation rate of particles formed in the plasma.