[16p-P13-1~5] 13.3 Insulator technology

[16p-P13-1] Hopping of hydrogen ions between sites in Si₃N₄ and SiO₂ films

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

Keywords:

hydrogen ion,hopping,bond length

The energy barrier of hydrogen ions in the Si₃N₄ and SiO₂ films and the bond lengths from the hydrogen ions to the nearest nitrogen and oxygen atoms were calculated using the molecular orbital method. The activation energies were estimated to be 2.17-2.86 eV and 1.81-2.98 eV, respectively. Furthermore, it was found that the N-H and O-H bond lengths were repeatedly lengthened and returned to normal bond lengths as hydrogen hopping occurred.