Session Details
[16p-P13-1~5]13.3 Insulator technology
Sun. Mar 16, 2025 4:00 PM - 6:00 PM JST
Sun. Mar 16, 2025 7:00 AM - 9:00 AM UTC
Sun. Mar 16, 2025 7:00 AM - 9:00 AM UTC
P13 (Gymnasium)
[16p-P13-1]Hopping of hydrogen ions between sites in Si3N4 and SiO2 films
〇Tomoki Oku1, Masahiro Totsuka1, Hajime Sasaki1 (1.Mitsubishi Electric)
[16p-P13-2]Construction of ReaxFF Force Field for Analysis of BN Deposition Mechanism in Thermal ALD Method
〇(M1)Seina Goto1,2, Takashi Tokumasu2 (1.Graduate School of Eng., Tohoku Univ., 2.Inst. of Fluid Science, Tohoku Univ.)
[16p-P13-3]Evaluation of modification of SiO2 thin film by flash lamp annealing treatment
〇Yoshiharu Kirihara1, Kazuma Kyotani1, Ryoichi Kawai1, Shogo Shigemasu2, Hideaki Tanimura2, Shinichi Kato2, Katsuhiro Mitsuda2, Yuichiro Mitani1, Hiroshi Nohira1 (1.Tokyo City Univ., 2.SCREEN Semiconductor Solutions)
[16p-P13-4]Improvements of Ai2O3/Ge interface properties by H radical treatment and Ge epi-layer insertion
〇Ito Tomotaka1, Kentarou Sawano1, Kiyokazu Nakagawa2 (1.Tokyo City Univ., 2.ABIT Technologies)
[16p-P13-5]Fabrication of MIM diode using spin-coating method for optical rectennas
〇(M2)Sho Ishi1, Keisuke Yanagisawa1, Takashi Akabane1, You Yin1 (1.Gunmma Univ.)