[16p-P13-1~5] 13.3 Insulator technology

[16p-P13-4] Improvements of Ai₂O₃/Ge interface properties by H radical treatment and Ge epi-layer insertion

〇Ito Tomotaka¹, Kentarou Sawano¹, Kiyokazu Nakagawa² (1.Tokyo City Univ., 2.ABIT Technologies)

Keywords:

insulating film

In recent years, the increasing power consumption associated with degitalization has become a significant issue, highlightning the importance of Ge based MOSFETs with high channel mobility as next-generation devices. However, interface defects during gate dielectric formation on Ge surfaces remain a challenge for performance improvement. In this study, epitaxial growth of Ge substrates was performed using molecular beam epitaxy(MBE), followed by high-quality alumina deposition (ALD) with radical treatment. A comparison of C-V characteristics revealed that epitaxial Ge significantly enhances interface quality.