[16p-Y1311-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-14] Temperature dependence of defect distribution in amorphous In-Ga-Zn-O thin film transistors using fast inverse analysis of device simulation

〇(D)Atsushi Shimizu¹, Masatoshi Kimura¹, Keisuke Ide¹, Takayoshi Katase¹, Hidenori Hiramatsu¹, Hideo Hosono¹, Toshio Kamiya¹ (1.Science Tokyo)

Keywords:

a-IGZO thin film transistor,defect distribution analysis,device simulation

In this study, we analyzed the temperature dependence of defect distribution in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) up to a high-temperature range of 300^oC, which had not been reported before. Despite having a bandgap of over 3.0 eV, a-IGZO exhibits poor thermal stability in air, showing significant negative Vth shifts and a decrease in on-current at temperatures above 150^oC. Defect analysis using high-speed reverse analysis revealed that the increase in deep electron trap levels and the degradation of TFT characteristics with rising temperature are attributed to oxygen adsorption from the air onto the back channel.