[16p-Y1311-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-Y1311-6] Formation of high-quality SiO₂/β–Ga₂O₃ MOS structures by post-deposition annealing

〇Kensei Maeda¹, Takuma Kobayashi¹, Masahiro Hara¹, Mikito Nozaki¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:

Ga2O3,MOS,Interface state density