[17a-K101-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-K101-1] Initial growth mechanism of ALD-TiN on HfO₂ in ultra-thin high-k/metal gate stacks for gate-all-around (GAA) MOSFET

〇Yukinori Morita¹, Kenzo Manabe¹, Hiroyuki Ota¹, Yoshihiro Hayashi¹ (1.SFRC, AIST)

Keywords:

ALD,TiN,HfO2