Presentation Information

[17a-K101-5]Local interconnect process using nanoimprint lithography

〇Kenta Suzuki1, Tetsuya Ueda1, Yuji Kasashima1, Masanaga Fukasawa1, Hiroshi Hiroshima1, Yoshihiro Hayashi1, Masaki Ishida2, Tomomi Funayoshi2, Hiromi Hiura2, Masayuki Kagawa2, Noriyasu Hasegawa2, Kiyohito Yamamoto2 (1.SFRC, AIST, 2.Canon)

Keywords:

Logic semiconductor,Nanoimprint lithography,damascene interconnect

Nanoimprint lithography(NIL) has recently been attracting attention as a green lithographic technology. In this work, a test pattern with a minimum pitch of 48 nm was fabricated using NIL, and W damascene interconnect processes. The electrical performances of the test devices were subsequently evaluated using the open/short test element group.

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