Presentation Information
[17a-K102-7]Deposition of a single layer MoS2 on a graphene ultrathin gate structure by using the transfer method
Hideaki Sugino1, Fuminori Sasaki1, Hirai Tanaka1, Toshifumi Irisawa2, Takeo Matsuki3, Takuya Ozaki4, Daisuke Ohori4, Kazuhiko Endo4, Issei Watanabe5, 〇Hirokazu Fukidome1 (1.RIEC, Tohoku Univ., 2.AIST, 3.Univ. of Tsukuba, 4.IFS, Tohoku Univ., 5.NICT)
Keywords:
2D semiconductor,graphene,ultrashort gate
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