Session Details
[17a-K102-1~8]17.3 Layered materials
Mon. Mar 17, 2025 9:30 AM - 11:45 AM JST
Mon. Mar 17, 2025 12:30 AM - 2:45 AM UTC
Mon. Mar 17, 2025 12:30 AM - 2:45 AM UTC
K102 (Lecture Hall Bldg.)
Ryouta Negishi(Toyo Univ.)
[17a-K102-1]Development of an autonomous 2D semiconductors production system driven by Bayesian optimization
〇Wataru Idehara1, Fan Yang1, Keisuke Shinokita1, Kazunari Matsuda1 (1.Kyoto Univ.)
[17a-K102-2]Growth of MoS2 Nanosheets on Suspended Twisted Bilayer Graphene
Shun Tonegawa1, Abdul Kuddus2, 〇Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.R-GIRO)
[17a-K102-3]In-situ observation of precursor droplet dynamics and crystal growth through vapor-liquid-solid growth of monolayer WS2 in substrate-stacked microreactor
〇Yutaro Senda1, Yasuhiko Hayashi1, Hiroo Suzuki1 (1.Okayama Univ.)
[17a-K102-4]Control of Composition and Film Quality by H2S Annealing for ZrxHf1-xS2 Alloy Films Prepared by Co-Sputtering with Powder HfS2 Target
〇Taichi Ishikawa1, Koki Hori1,2, Naoya Okada2, Atsushi Ogura1,3 (1.Meiji Univ., 2.AIST, 3.MREL)
[17a-K102-5]Low-temperature synthesis of highly crystalline h-BN nanocrystals
〇(M1)Hayate Hirao1, Hiroyo Segawa2, Chen Jun2, Ryosuke Matsubara1, Takashi Uchino1 (1.Kobe Univ., 2.NIMs)
[17a-K102-6]Low-temperature catalytic graphitization of hard carbon with Mg
〇(M1)Kotaro Taki1, Takashi Uchino1 (1.Kobe Univ.)
[17a-K102-7]Deposition of a single layer MoS2 on a graphene ultrathin gate structure by using the transfer method
Hideaki Sugino1, Fuminori Sasaki1, Hirai Tanaka1, Toshifumi Irisawa2, Takeo Matsuki3, Takuya Ozaki4, Daisuke Ohori4, Kazuhiko Endo4, Issei Watanabe5, 〇Hirokazu Fukidome1 (1.RIEC, Tohoku Univ., 2.AIST, 3.Univ. of Tsukuba, 4.IFS, Tohoku Univ., 5.NICT)
[17a-K102-8]Growth of sulfur-doped bismuth selenide crystals and evaluation of their electronic structure
〇Hiroki Waizumi1,2, Souma Takefuta1, Hiroto Inui1, Seiya Yokokura1,2, Toshihiro Shimada1,2 (1.CSE. Hokkaido Univ., 2.Eng. Hokkaido Univ.)