[17a-K102-1~8] 17.3 Layered materials

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-K102-8] Growth of sulfur-doped bismuth selenide crystals and evaluation of their electronic structure

〇Hiroki Waizumi^1,2, Souma Takefuta¹, Hiroto Inui¹, Seiya Yokokura^1,2, Toshihiro Shimada^1,2 (1.CSE. Hokkaido Univ., 2.Eng. Hokkaido Univ.)

Keywords:

Layered material,Topological insulator,Angle-resolved photoemission spectroscopy (ARPES)

Bismuth selenide (Bi₂Se₃) is a topological insulator (TI), but its internal insulating properties are compromised when the Fermi level is in the conduction band due to Se deficiency. Ultra-thin films are one way to deal with it, but the advantages of TI, the conductive in only surface, are canceled out. In this study, we aimed to deal with Se deficiency by doping S during crystal growth to control the bulk conductivity. We observed the electronic structure near the surface of the crystal by angle-resolved photoemission spectroscopy (ARPES).