[17a-K103-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-K103-1] Evaluation of the electrical properties of SiO₂ thin films formed using a low-temperature process at 52°C

〇Kohei Sakaike¹, Seiichiro Higashi² (1.NIT, Hiroshima college, 2.Hiroshima Univ.)

Keywords:

SiO2,Flexible Electronics,polysilazane

We have previously succeeded in generating a low-temperature plasma jet of a mixture of argon (Ar) and water vapor, and converting perhydropolysilazane (PHPS) thin films to silica at a low temperature of only 52°C. In addition, they have elucidated the mechanism of this low-temperature, high-speed conversion to silica. In this study, we report on the evaluation of the film quality by obtaining the capacitance-voltage (C-V) characteristics and the leakage current density-electric field strength (J-E) characteristics of the MOS capacitor using the SiO₂ film converted from PHPS.