The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[17a-K103-1~11]13.4 Si processing /Si based thin film / MEMS / Equipment technology

Mon. Mar 17, 2025 9:00 AM - 12:00 PM JST
Mon. Mar 17, 2025 12:00 AM - 3:00 AM UTC
K103 (Lecture Hall Bldg.)
Wenchang Yeh(Shimane Univ.), Tatsuya Okada(Univ. of the Ryukyus)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-K103-1]Evaluation of the electrical properties of SiO2 thin films formed using a low-temperature process at 52°C

〇Kohei Sakaike1, Seiichiro Higashi2 (1.NIT, Hiroshima college, 2.Hiroshima Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K103-2]Si MOSFET fabricated on parallelly connected single-crystal strips by raster scanning of μCL

〇(M1)Ryota Nosu1, Hanabi Takahashi1, Wenchang Yeh1 (1.Shimane Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[17a-K103-3]Periodic Transverse Lines in the (100) Grain-Boundary-Free CLC Si Thin Films

〇Nobuo Sasaki1,2, Satoshi Takayama2, Yukiharu Uraoka2 (1.Sasaki Consulting, 2.NAIST)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-K103-4]Beam focus dependence of CW laser crystallized Si thin films

〇Satoshi Takayama1, Sasaki Nobuo1,2, Uraoka Yukiharu1 (1.NAIST, 2.Sasaki Consulting)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-K103-5]CMOS inverter using DG poly-Si vertical TFTs on glass substrates

〇Kosei Suzuki1, Akito Hara1 (1.Tohoku Gakuin Univ.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[17a-K103-6]Feasibility of hybrid CMOS using poly-Ge TFT and Oxide TFT

〇Akito Kurihara1, Daiki Goshima1, Akito Hara1 (1.Tohoku Gakuin Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K103-7]Low Temperature Phosphorus Diffusion in n/n+ Silicon Epitaxial Wafers

〇Shinsaku Kawabata1, Shinya Sato1 (1.TDSC)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K103-8]High re-activation of epitaxial Si:P layers using flash lamp annealing (FLA)

〇Yuma Ueno1, Hideaki Tanimura1, Kazuhiko Fuse1, Katsuhiro Mitsuda1, Shinichi Kato1 (1.SCREEN Semiconductor Solutions Co., Ltd.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K103-9]Formation of Si-Nanosheet from Si0.7Ge0.3/Si/Si0.7Ge0.3 Stacked Layers by H2 Diluted CF4 Plasma

〇Kotaro Ozaki1, Takayoshi Tsutsumi2, Kenji Ishikawa2, Yuji Yamamoto3, Wei-Chen Wen3, Katsunori Makihara1 (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS, 3.IHP)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-K103-10]Effect of SiO2 Capping on RTA Crystallization of InSb Thin Films Deposited by RF Sputtering using Ne

〇Shota Oku1, Tatsushi Higa1, Takashi Noguchi1, Takashi Kajiwara2, Taizoh Sadoh2, Tatsuya Okada1 (1.Univ. Ryukyus, 2.Kyushu Univ.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[17a-K103-11]Crystalization of InSb Films Deposited by RF Suputtering on Polyimide using RTA

〇Tatsushi Higa1, Shota Oku1, Takashi Noguchi1, Takashi Kajiwara2, Taizoh Sadoh2, Tatsuya Okada1 (1.Univ. Ryukyus, 2.Kyushu Univ.)
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