[17a-K103-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-K103-10] Effect of SiO₂ Capping on RTA Crystallization of InSb Thin Films Deposited by RF Sputtering using Ne

〇Shota Oku¹, Tatsushi Higa¹, Takashi Noguchi¹, Takashi Kajiwara², Taizoh Sadoh², Tatsuya Okada¹ (1.Univ. Ryukyus, 2.Kyushu Univ.)

Keywords:

InSb,Hall Mobility,Crystallization