Presentation Information
[17a-K103-2]Si MOSFET fabricated on parallelly connected single-crystal strips by raster scanning of μCL
〇(M1)Ryota Nosu1, Hanabi Takahashi1, Wenchang Yeh1 (1.Shimane Univ.)
Keywords:
semiconductor,silicon,transistor
We have obtained high mobility by growing (001) single crystal strips of Si films on SiO2 by the micro-chevron laser scanning (μCLS) method.
However, microcrystals at both ends of the channel and random crystal orientation in the μCL scanning direction caused the decrease and variation of mobility.
In this study, we developed a parallel-connected single crystal strip by raster scanning of μCL that does not contain microcrystal areas and can reduce the mobility variation. Its crystalline and MOSFET characteristics are reported.
However, microcrystals at both ends of the channel and random crystal orientation in the μCL scanning direction caused the decrease and variation of mobility.
In this study, we developed a parallel-connected single crystal strip by raster scanning of μCL that does not contain microcrystal areas and can reduce the mobility variation. Its crystalline and MOSFET characteristics are reported.
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