[17a-K103-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[17a-K103-3] Periodic Transverse Lines in the (100) Grain-Boundary-Free CLC Si Thin Films

〇Nobuo Sasaki^1,2, Satoshi Takayama², Yukiharu Uraoka² (1.Sasaki Consulting, 2.NAIST)

Keywords:

cw laser crystallization (CLC),transverse surface lines

A huge (100) oriented grain-boundary-free single crystalline CLC films of 0.2 mm width and > 3-10 mm length have been obtained. We sometimes observe longtitudinal and transverse lines to the scan direction by AFM but we cannot observe them by EBSD. We have reported the longitudinaol lines are explained by hyperfine-sub-boundaries. This paper discusses the origin of the transverse lines in the region of crystal growth from melt. The transverse lines are originated from the explosive crystallization during the solid-state-crystallization before the CLC crystallization from melt.