[17a-K103-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[17a-K103-6] Feasibility of hybrid CMOS using poly-Ge TFT and Oxide TFT

〇Akito Kurihara¹, Daiki Goshima¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

Keywords:

poly-Ge,Oxide semiconductor,Plastic substrate