[17a-K103-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K103-8] High re-activation of epitaxial Si:P layers using flash lamp annealing (FLA)

〇Yuma Ueno¹, Hideaki Tanimura¹, Kazuhiko Fuse¹, Katsuhiro Mitsuda¹, Shinichi Kato¹ (1.SCREEN Semiconductor Solutions Co., Ltd.)

Keywords:

flash lamp annealing,FLA,activation