Presentation Information

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K103-9]Formation of Si-Nanosheet from Si_0.7Ge_0.3/Si/Si_0.7Ge_0.3 Stacked Layers by H₂ Diluted CF₄ Plasma

〇Kotaro Ozaki¹, Takayoshi Tsutsumi², Kenji Ishikawa², Yuji Yamamoto³, Wei-Chen Wen³, Katsunori Makihara¹ (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS, 3.IHP)

Keywords:

Si-Nanosheet,GAA-FETs

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Presentation Information

[17a-K103-9]Formation of Si-Nanosheet from Si0.7Ge0.3/Si/Si0.7Ge0.3 Stacked Layers by H2 Diluted CF4 Plasma

Keywords:

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[17a-K103-9]Formation of Si-Nanosheet from Si_0.7Ge_0.3/Si/Si_0.7Ge_0.3 Stacked Layers by H₂ Diluted CF₄ Plasma