[17a-K202-1~9] 13.3 Insulator technology

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[17a-K202-5] Stress-mode (CHC, F-N) dependence of cryogenic degradation in nMOSFET

〇Tatsuya Suzuki¹, Yohei Miyaki¹, Yuichiro Mitani¹ (1.Tokyo City Univ)

Keywords:

semiconductor,reliability,cryogenic

Transistors are expected to be applied to various fields because their electrical characteristics are improved by operating them at cryogenic temperatures, but the degradation mechanism of transistors at cryogenic temperatures has not been clarified. In this study, we simultaneously measured the transistor characteristics and interfacial level transition in relation to the stress application time in CHC and F-N stresses.