The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.3 Insulator technology

[17a-K202-1~9]13.3 Insulator technology

Mon. Mar 17, 2025 9:30 AM - 11:45 AM JST
Mon. Mar 17, 2025 12:30 AM - 2:45 AM UTC
K202 (Lecture Hall Bldg.)
Takanobu Watanabe(Waseda Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K202-1]Evaluation of Interface Properties in SiO2/Si MOS Capacitors on Si(110) Vicinal Substrates

〇Ryotaro Shimura1, Eishin Nako1, Koji Matsumoto2, Akihiro Suzuki2, Hiroaki Yamamoto2, Kazuto Matsukawa2, Mitsuru Takenaka1, Shinichi Takagi1, Kasidit Toprasertpong1 (1.Uinv. Tokyo, 2.SUMCO Corp.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K202-2]Two Types of Fixed Charge Generation in MOSFET Degradation at Cryogenic Temperatures

〇Yohei Miyaki1, Tatsuya Suzuki1, Yuichiro Mitani1 (1.Tokyo City Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K202-3]Improvement of Electrical Stress Resistance of SiO2 Films by Low-Temperature Oxidation Treatment

〇YOSHIHARU ASHIKAGA1, YOSHIHIRO TAKAHASHI1 (1.Nihon Univ.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[17a-K202-4]Improvement of TDDB variation by stacking gate film in trench field plate power MOSFET

〇Daichi Ishii1, Satoshi Hoshida1, Tatsuro Ueno1, Toshifumi Nishiguchi1, Kenji Maeyama1, Tsuyoshi Kachi1, Hiroaki Kato1 (1.Toshiba Electronic Devices and Storage)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[17a-K202-5]Stress-mode (CHC, F-N) dependence of cryogenic degradation in nMOSFET

〇Tatsuya Suzuki1, Yohei Miyaki1, Yuichiro Mitani1 (1.Tokyo City Univ)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-K202-6]Atomic Scale Insights into Si Transport Pathway in Si-Oxide Film Based on Theoretical Investigation of Medium Density Effects

〇Hiroyuki Kageshima1, Toru Akiyama2, Kenji Shiraishi3 (1.Shimane Univ., 2.Mie Univ., 3.Nagoya Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-K202-7]A consideration for Pseudo-Cristobalite model appeared in Si(001) oxidation

〇Eiji Kamiyama1,2, Koji Sueoka2 (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-K202-8]Reduction of OH groups in low-temperature Si oxide films annealed by NH3 gas with controlled amount of added water (H2O) vapor

〇Susumu Horita1 (1.JAIST)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-K202-9]Automatic Film Thickness Measurement for TEM Images by Image Processing

〇Shinya Hattori1, Akane Kitamura1, Kenji Kameda1 (1.KOKUSAI ELECTRIC CORPORATION)
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