[17a-K202-1~9] 13.3 Insulator technology

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-K202-6] Atomic Scale Insights into Si Transport Pathway in Si-Oxide Film Based on Theoretical Investigation of Medium Density Effects

〇Hiroyuki Kageshima¹, Toru Akiyama², Kenji Shiraishi³ (1.Shimane Univ., 2.Mie Univ., 3.Nagoya Univ.)

Keywords:

Si oxidation,Si transport,first-principles calculation

We have focused on the Si atoms transported from the interface into the oxide film during the Si oxidation process that forms the MOS interface. We have discussed a pathway in which these Si atoms, possessing a structure of interstitial SiO, diffuse through the oxide film toward its surface. This time, we theoretically examine how the potential profile of the diffusion pathway is influenced by the density of the oxide film. The results indicate the necessity of considering the local structure of the oxide film, even in the case of amorphous Si oxide films, from the perspective of ‘film quality’.