[17a-K202-1~9] 13.3 Insulator technology

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-K202-8] Reduction of OH groups in low-temperature Si oxide films annealed by NH₃ gas with controlled amount of added water (H₂O) vapor

〇Susumu Horita¹ (1.JAIST)

Keywords:

Si oxide film,low-temperature formation,OH

It is desired that deposited Si oxide (SiOx) films are formed at lower temperature. But, their dielectric property is gotten worse because a large amount of residual OH bonds exist in them. For this problem, we have been proposing using NH₃ and N₂ mixed species as an annealing gas because it is very effective for reduction of OH bonds. Further, adding water H₂O vapor to the mixed gas enhances the effect even at 130 ^oC. However, we found that long time annealing with excessive supply of water vapor leads to opposite effect, i.e., increasing amount of OH bonds with annealing time. By controlling or reducing amount of water vapor, the problem due to long annealing time can be solved.