[17a-K301-1~10] 13.7 Compound and power devices, process technology and characterization

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[17a-K301-2] Evaluation of deep levels in GaN epilayers on HVPE and OVPE substrates

〇Yu Furuhashi¹, Shigeyoshi Usami², Yusuke Mori², Hirotaka Watanabe³, Shugo Nitta³, Yoshio Honda³, Hiroshi Amano³, Masashi Kato¹ (1.Nagoya Inst. of Tech., 2.Osaka Univ, 3.Nagoya Univ.)

Keywords:

GaN