The 72nd JSAP Spring Meeting 2025
Advanced Search

Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[17a-K301-1~10]13.7 Compound and power devices, process technology and characterization

Mon. Mar 17, 2025 9:00 AM - 11:45 AM JST
Mon. Mar 17, 2025 12:00 AM - 2:45 AM UTC
K301 (Lecture Hall Bldg.)
Zenji Yatabe(Kumamoto Univ.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K301-1]Development of Highly Efficient Polishing Method for Gallium Nitride Substrates Using Photoelectrochemical Oxidation Reaction
Suppression of processing non-uniformity caused by oxygen impurity concentration distribution and defects in the substrate

〇(DC)Kiyoto Kayao1, Tatsuya Fukagawa1, Daisetsu Toh1, Jumpei Yamada1, Kazuto Yamauchi1, Yasuhisa Sano1 (1.Osaka Univ.)
Comment()
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[17a-K301-2]Evaluation of deep levels in GaN epilayers on HVPE and OVPE substrates

〇Yu Furuhashi1, Shigeyoshi Usami2, Yusuke Mori2, Hirotaka Watanabe3, Shugo Nitta3, Yoshio Honda3, Hiroshi Amano3, Masashi Kato1 (1.Nagoya Inst. of Tech., 2.Osaka Univ, 3.Nagoya Univ.)
Comment()
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[17a-K301-3]Comparison of characteristics for n-type GaN films prepared by different sputtering sources

〇Shinji Yamada1, Kiho Tanaka1, Manabu Arai2, Tetsu Kachi2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)
Comment()
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-K301-4]Time-resolved photoluminescence studies of Mg-ion-implanted GaN processed by ultra-high-pressure annealing

〇Kohei Shima1, Ryo Tanaka2, Shinya Takashima2, Katsunori Ueno2, Shoji Ishibashi3, Akira Uedono4, Shigefusa Chichibu1 (1.IMRAM-Tohoku Univ., 2.Fuji Electric, 3.AIST, 4.Univ. of Tsukuba)
Comment()
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-K301-5]Thermal generation rate of hole traps at SiO2/p-GaN MOS interfaces

〇Masahiro Hara1, Kenji Hirahara1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.Osaka Univ.)
Comment()
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K301-6]Electrical Properties under Sub-Eg-Light Illumination of GaN npn Structures used in GaN MOSFETs

〇Nami Kusunoki1, Tohru Oka2,3, Nariaki Tanaka3, Kazuya Hasegawa3, Takatomi Izumi3, Takaki Niwa3, Jun Suda1,2 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Toyoda Gosei.)
Comment()
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-K301-7]Analysis of current-voltage characteristics of GaN npn structures

〇Tohru Oka1,2, Jun Suda1,3 (1.IMaSS Nagoya Univ., 2.Toyoda Gosei, 3.Nagoya Univ.)
Comment()
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-K301-8]Analysis of fixed charge densities in the trench of vertical GaN trench MOSFETs

〇Tohru Oka1,2 (1.IMaSS Nagoya Univ., 2.Toyoda Gosei)
Comment()
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-K301-9]Reversibility of Forward Current Stress Degradation in GaN p-n Diodes

〇Daiki Iwata1, Hiroshi Ohta2, Yoshinobu Narita1, Takashi Sato1, Fumimasa Horikiri1, Tomoyoshi Mishima2, Takeshi Tanaka1, Kiyotoshi Iimura1, Hajime Fujikura1 (1.Sumitomo Chemical, 2.Housei Univ.)
Comment()
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)English Presentation

[17a-K301-10][The 46th Young Scientist Award Speech] kV-class Vertical GaN Junction Barrier Diodes using Mg Implantation

〇Dolar Khachariya1, Will Mecouch1, Seiji Mita1, Shashwat Rathkanthiwar2, Pramod Reddy1, Ronny Kirste1, Kacper Sierakowski3, Grzegorz Kamler3, Michal Bockowski3, Erhard Kohn2, Spyridon Pavlidis2, Ramon Collazo2, Zlatko Sitar1,2 (1.Adroit Materials Inc., Cary, NC, USA, 2.North Carolina State Univ., Raleigh, NC, USA, 3.Institute of High Pressure Physics, Sokolowska, Warsaw, Poland)
Comment()
Back to Category List